Exploration of novel heterostructure semiconductors to create energy efficient, tunnel-based Field Effect Transistors

Open Access
Author:
Ostrowski, Chad Anthony Eric
Area of Honors:
Interdisciplinary in Electrical Engineering and Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
  • Suman Datta, Thesis Supervisor
  • Gary Gray, Honors Advisor
  • Timothy Joseph Kane, Honors Advisor
  • Judith A Todd, Faculty Reader
Keywords:
  • tunneling
  • TFETs
  • InGaAs
  • indium gallium arsenide
  • transistors
Abstract:
A simple program was developed to calculate device characteristics of a reverse-biased, heterojunction InGaAs diode. This calculator allows for quick estimates of ideal device currents given various design parameters, as well as allowing experimental results to be plotted along with ideal results for comparison. Additionally, the calculator allows for the estimation of series resistance inherent in an actual device due to making contact to it. This calculator uses only software freely available to the general public and can be accessed from any place with an internet connection.