Dr. Patrick M Lenahan, Thesis Supervisor Dr. Patrick M Lenahan, Thesis Supervisor Dr. Akhlesh Lakhtakia, Thesis Honors Advisor Judith A Todd Copley, Faculty Reader
Keywords:
SiC wide bandgap semiconductors
Abstract:
SiC is a wide band gap semiconductor material that has a lot of potential in high power and high temperature applications. In this study, we use two types of C-V measurements, the Gray-Brown and Jenq techniques to observe the density of states and defect concentrations within SiC MOSFET samples. Comparing devices prepared with different oxide growth techniques, we observe large differences interface trap concentrations in two devices. Our results suggest the NO/NO2 annealing step helps lower the defect concentrations and supports recent magnetic resonance measurements.
