Material Physics Study of SiC MOSFETS

Open Access
Author:
Rydzewski, David Alexander
Area of Honors:
Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
  • Dr Lenahan, Thesis Supervisor
  • Patrick M Lenahan, Thesis Supervisor
  • Akhlesh Lakhtakia, Honors Advisor
  • Judith A Todd, Faculty Reader
Keywords:
  • SiC
  • wide bandgap
  • semiconductors
Abstract:
SiC is a wide band gap semiconductor material that has a lot of potential in high power and high temperature applications. In this study, we use two types of C-V measurements, the Gray-Brown and Jenq techniques to observe the density of states and defect concentrations within SiC MOSFET samples. Comparing devices prepared with different oxide growth techniques, we observe large differences interface trap concentrations in two devices. Our results suggest the NO/NO2 annealing step helps lower the defect concentrations and supports recent magnetic resonance measurements.