Investigation of amorphous thin films using electrically detected magnetic resonance

Open Access
Mclemore, Charles Armand
Area of Honors:
Engineering Science
Bachelor of Science
Document Type:
Thesis Supervisors:
  • Dr. Patrick M Lenahan, Thesis Supervisor
  • Dr. Patrick M Lenahan, Honors Advisor
  • Dr. Akhlesh Lakhtakia, Faculty Reader
  • thin film
  • magnetic resonance
  • zero-field
  • magnetoresistance
  • amorphous
  • variable range hopping
  • spin dependent
  • trap assisted tunneling
  • electrically detected magnetic resonance
Amorphous thin films play an important role in the electronics industry due to their low fabrication cost and their many current and potential applications. In order to gain a better understanding of the electronic properties of these materials, low-field electrically detected magnetic resonance was used to observe changes in spin-dependent trap-assisted tunneling in films of amorphous hydrogenated boron, amorphous hydrogenated carbon, and diamond-like carbon. The resulting measurements indicate the presence of mid-band gap trap states that facilitate conduction in the films via spin-dependent variable range hopping. Furthermore, the similarity in voltage-dependence of the magnetic resonance and near zero-field magnetoresistance responses provides strong evidence for a common physical origin driving both processes.