Investigation of amorphous thin films using electrically detected magnetic resonance

Open Access
Author:
Mclemore, Charles Armand
Area of Honors:
Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
  • Patrick M. Lenahan, Thesis Supervisor
  • Patrick M. Lenahan, Honors Advisor
  • Akhlesh Lakhtakia, Faculty Reader
Keywords:
  • thin film
  • magnetic resonance
  • zero-field
  • magnetoresistance
  • amorphous
  • variable range hopping
  • spin dependent
  • trap assisted tunneling
  • electrically detected magnetic resonance
Abstract:
Amorphous thin films play an important role in the electronics industry due to their low fabrication cost and their many current and potential applications. In order to gain a better understanding of the electronic properties of these materials, low-field electrically detected magnetic resonance was used to observe changes in spin-dependent trap-assisted tunneling in films of amorphous hydrogenated boron, amorphous hydrogenated carbon, and diamond-like carbon. The resulting measurements indicate the presence of mid-band gap trap states that facilitate conduction in the films via spin-dependent variable range hopping. Furthermore, the similarity in voltage-dependence of the magnetic resonance and near zero-field magnetoresistance responses provides strong evidence for a common physical origin driving both processes.