Investigation of amorphous thin films using electrically detected magnetic resonance
Open Access
Author:
Mclemore, Charles Armand
Area of Honors:
Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
Dr. Patrick M Lenahan, Thesis Supervisor Dr. Patrick M Lenahan, Thesis Honors Advisor Dr. Akhlesh Lakhtakia, Faculty Reader
Keywords:
thin film magnetic resonance zero-field magnetoresistance amorphous variable range hopping spin dependent trap assisted tunneling electrically detected magnetic resonance
Abstract:
Amorphous thin films play an important role in the electronics industry due to their low fabrication cost and their many current and potential applications. In order to gain a better understanding of the electronic properties of these materials, low-field electrically detected magnetic resonance was used to observe changes in spin-dependent trap-assisted tunneling in films of amorphous hydrogenated boron, amorphous hydrogenated carbon, and diamond-like carbon. The resulting measurements indicate the presence of mid-band gap trap states that facilitate conduction in the films via spin-dependent variable range hopping. Furthermore, the similarity in voltage-dependence of the magnetic resonance and near zero-field magnetoresistance responses provides strong evidence for a common physical origin driving both processes.
