Near-Zero-Field Magnetic Resonance in Silicon-Silicon Dioxide

Open Access
Author:
Sharov, Fedor Viktorovich
Area of Honors:
Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
  • Patrick Lenahan, Thesis Supervisor
  • Ibrahim Ozbolat, Honors Advisor
Keywords:
  • spectrometry
  • magnetic field
  • zero field
  • silicon
  • silicon dioxide
  • MOS device
Abstract:
Electrically detected magnetic resonance (EDMR) and electron paramagnetic resonance (EPR) are both powerful analytical techniques for researching the effectiveness and physics of solid state devices, but they are not perfect in their ability to study defect centers in all such systems. The electromagnetic radiation required for these techniques cannot penetrate conductive elements within complex solid state devices. As the semiconductor industry begins to innovate new material designs to address issues such as limited packing density and efficiency, it is possible that traditional EDMR techniques will not be able to provide a useful spectra. However, it is also possible that new techniques could be developed in order to bypass these limitations. Recent studies of hyperfine interactions in solid state devices near zero field magneto-resistance have lead researchers to believe that information about a devices characteristics can be found within a “near-zero” magnetic field measurement of electronic response. The development of an accurate near zero field spin-dependent recombination based magnetic resonance Hamiltonian could potentially allow for the data produced using this technique’s recombination spectra to produce insight about a device’s defects, interface problems, and various other characteristics. While this tool may be less capable of granting insight than traditional EDMR/EPR, it does offer promise in its ability to measure hyperfine field effects. Theoretical physicists at the University of Iowa, Drs. M. Flatte and N. Harmon, are developing a quantitative model for near zero field response that they believe will be able to interpret near zero field data. Their hypothesis is that the hyperfine effect in this region can be explained in terms of the Stochastic Louiville Equation (SLE). Said solution would also offer a method of predicting the extent of singlet-triplet mixing at low magnetic fields. The goal of this thesis is to assist in the experimental research efforts in this collaborative project between the Pennsylvania State University and the University of Iowa. I have produced data that can be used to validate these complex theorized models. The use of radiation treatments as well as DC-IV measurements on Si-SiO2 interfaces were used in conjuncture with near zero field magnetic resonance measurements in order to produce a variety of data for this interface. Future research opportunities were also outlined. I will also assist in the exchange of data and observations between the two universities.