An Investigation of Resistive Random Access Memory

Open Access
Author:
Barker, William
Area of Honors:
Engineering Science
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
  • Patrick M Lenahan, Thesis Supervisor
  • Corina Stefania Drapaca, Honors Advisor
Keywords:
  • Magnetic Resonance
  • EDMR
  • EPR
  • Electron Paramagnetic Resonance
  • ReRAM
  • RRAM
  • NZFMR
  • Near-zero field magnetoresistance
  • Semiconductor Spectroscopy
Abstract:
This study evaluates two electron resonance spectroscopy techniques on an emerging memory technology, resistive random access memory. The first is electrically detected magnetic resonance, which is a well established spectroscopic technique used to investigate nanoelectronics. The second technique is near-zero field magnetoresistance, which is a new tool with the potential to provide information and functionally that electrically detected magnetic resonance cannot currently provide. 10 nm tantalum oxide resistive random access memory in a partially formed state was swept across 80 G centered at 0 G and with a 5 G modulation field. This analysis revealed a broad, asymmetric zero-field response, but no resonance response was present above the noise in the system. This study provides a preliminary spectroscopic analysis of resistive random access memory and is the first reported use of near-zero field magnetoresistance spectroscopy on a resistive random access memory device. While it does not provide any substantial evidence to support claims about the controversial formation and switching mechanisms discussed in current literature on resistive random access memory, this study provides clear evidence that further development of near-zero field magnetoresistance spectroscopy will be useful for the investigation of devices that are currently difficult to study with previously established electron resonance spectroscopy techniques.