2D Indium Nitride Realized via Confinement Heteroepitaxy
Open Access
- Author:
- Trdinich, Zachary
- Area of Honors:
- Materials Science and Engineering
- Degree:
- Bachelor of Science
- Document Type:
- Thesis
- Thesis Supervisors:
- Joshua Alexander Robinson, Thesis Supervisor
Amy Carol Robinson, Thesis Honors Advisor - Keywords:
- 2-dimensional
indium
nitride
materials science
2d materials - Abstract:
- Since the synthesis of free-standing graphene via mechanical exfoliation in 2004, 2-dimensional (2D) materials have been at the forefront of materials science research. Since then, the discovery of 2D metals, oxides, and nitrides through a variety of synthesis techniques have opened a realm of possibilities at the 2D limit. Their unique electronic, mechanical, and optical properties differ from their 3D counterparts, showing the effect that the 2D nature has on the material. In this work, the synthesis of 2D InN was enabled through confinement heteroepitaxy (CHet), a technique that enables control of 2D material synthesis at the interface between silicon carbide and epitaxial graphene (EG). Through CHet, metallic 2D In was formed at this SiC/EG interface. Subsequent nitridation via chemical vapor deposition using ammonia (NH3) transformed metallic 2D In to 2D InN and was confirmed via transmission electronic microscopy analysis showing bilayer 2D InN. Characterization of 2D InN via electron energy loss spectroscopy reported a bandgap of ~2.3 eV, which differs from bulk InN which possesses a bandgap of ~0.7 eV. These results continue to demonstrate the effects that confinement between SiC and EG has on the properties of 2D materials.