Optimization of Metal Assisted Epitaxial Graphene Transfer on SiO2/Si Substrates
Open Access
- Author:
- Sipe, Adam
- Area of Honors:
- Materials Science and Engineering
- Degree:
- Bachelor of Science
- Document Type:
- Thesis
- Thesis Supervisors:
- Joshua Alexander Robinson, Thesis Supervisor
Amy Carol Robinson, Thesis Honors Advisor - Keywords:
- graphene
SiO2/Si
high-power electronics
thin films - Abstract:
- Optimizing transfer of high-quality graphene films onto a variety of different substrates has huge potential for innovation in the field of high-power electronics. While graphene transfer has long been established as possible, challenges remain in addressing issues of film quality, surface contamination, and general cleaning procedures. This study explores developing a protocol capable of reproducibly yielding high-quality graphene films using Ni assisted exfoliation of epitaxial graphene grown on SiC through the analysis of transfer experiments onto SiO2/Si substrates. Strategies for mitigating surface contamination and improving film quality were explored, with a focus on addressing polymer residue, unetched Ni, and FeCl3 particles post-transfer. Oxygen plasma cleaning treatment and careful selection of thermal release tape (TRT) with higher release temperatures were shown to be effective in reducing polymer residue. Magnetic stirring during etching and rinsing steps enhanced the removal of surface contaminants, while also mitigating surface damage from uncontrolled fluid flow. Additionally, substrate functionalization was introduced to enhance film adhesion, contributing to the development of a consistent transfer protocol. The optimized transfer procedure yielded a significant reduction in surface contaminants and defects, validated through OM, AFM, Raman, and XPS analyses. This standardized approach offers a reliable method for producing clean, defect-free graphene films, with potential applications in thin-film electronics. Looking forward, future research could explore utilizing the optimized transfer method on additional substrates relevant to device manufacturing, further expanding its applicability and potential impact in the field.