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Start Over Degree B S Year 2011 Keyword SiC

3. Understanding and Improving Defects in Silicon Carbide Semiconductor Devices

open_access
Open Access
Author:
Storey, Matthew Joseph
Title:
Understanding and Improving Defects in Silicon Carbide Semiconductor Devices
Area of Honors:
Engineering Science
Keywords:
SiC
defect density
semiconductor
silicon carbide
electrical measurement
File:
Download Storey_Matthew_SiC_Thesis.pdf
Thesis Supervisors:
Dr. Patrick M Lenahan, Thesis Supervisor
Dr. Patrick M Lenahan, Thesis Supervisor
Bernhard R Tittmann, Thesis Honors Advisor
Judith A Todd Copley, Faculty Reader