Long Term Electrical Stability Testing of Zinc Oxide Thin Film Transistors
Open Access
Author:
McCormick, Brian T
Area of Honors:
Electrical Engineering
Degree:
Bachelor of Science
Document Type:
Thesis
Thesis Supervisors:
Thomas Nelson Jackson, Thesis Supervisor Thomas Nelson Jackson, Thesis Supervisor John Douglas Mitchell, Thesis Honors Advisor
Keywords:
Zinc-Oxide Thin Film Transistor ZnO TFT Testing Measurement
Abstract:
The electrical stability of semiconductor devices over long periods of time is an important attribute in determining the usefulness of devices or new semiconductors compared to conventional devices and silicon, the industry standard semiconductor. Zinc oxide is a relatively new semiconductor material for which the long term stability of the material and devices is currently unknown. In this work, the electrical stability of zinc oxide thin film transistors was measured through electrical stress testing. The temperature sensing properties of a zinc oxide transistor array were also measured.
